🎉 Exclusive offer: FREE shipping of all MCU & MPU products. No code or minimum required. 🛒 Order now!

📢 Bonus offer: Get our latest VIPGAN65 board with Free shipping. Use code DV-EVLVIPGAN65DF-FREESHIP-05 at checkout! 🛒 Claim now!

L6385ED013TR

L6385ED013TR

Active

L6385ED

HV high and low side driver with embedded bootstrap diode

Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently...
Read More

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 400 mA source
    • 650 mA sink
  • Switching times 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Undervoltage lockout on lower and upper driving section
  • Internal bootstrap diode
  • Outputs in phase with inputs
In stock
Quantity $ per unit Savings
1-9$1.280%
10-24$0.9327%
25-99$0.8434%
100-249$0.7542%
250-499$0.6946%
500$0.6748%
Contact sales
$1.28
$1.28
Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently...
Read More

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 400 mA source
    • 650 mA sink
  • Switching times 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Undervoltage lockout on lower and upper driving section
  • Internal bootstrap diode
  • Outputs in phase with inputs