L6385ED013TR

L6385ED013TR

Active

L6385ED

HV high and low side driver with embedded bootstrap diode

Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently...
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Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 400 mA source
    • 650 mA sink
  • Switching times 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Undervoltage lockout on lower and upper driving section
  • Internal bootstrap diode
  • Outputs in phase with inputs
In stock
Quantity $ per unit Savings
1-9$1.460%
10-24$1.3011%
25-99$1.2316%
100$0.9833%
Contact sales
$1.46
$1.46
Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently...
Read More

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 400 mA source
    • 650 mA sink
  • Switching times 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Undervoltage lockout on lower and upper driving section
  • Internal bootstrap diode
  • Outputs in phase with inputs