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    L6385ED013TR

    L6385ED013TR

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    L6385ED

    HV high and low side driver with embedded bootstrap diode

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-8
    Description

    The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently...
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    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/nsec in full temperature range
    • Driver current capability:
      • 400 mA source
      • 650 mA sink
    • Switching times 50/30 nsec rise/fall with 1 nF load
    • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
    • Undervoltage lockout on lower and upper driving section
    • Internal bootstrap diode
    • Outputs in phase with inputs
    In stock
    Quantity $ per unit Savings
    1-9$1.470%
    10-99$1.2614%
    100$0.9734%
    100 + Contact sales
    $1.47
    $1.47
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-8
    Description

    The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/nsec in full temperature range
    • Driver current capability:
      • 400 mA source
      • 650 mA sink
    • Switching times 50/30 nsec rise/fall with 1 nF load
    • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
    • Undervoltage lockout on lower and upper driving section
    • Internal bootstrap diode
    • Outputs in phase with inputs
    Associated products