L6389ED

High voltage high and low-side driver

Parameters

Operating Range	Industrial
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-8

Description

The L6389E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA...
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Key features

Key features
High voltage rail up to 600 V dV/dt immunity ± 50 V/nsec in full temperature range Driver current capability: 400 mA source 650 mA sink Switching times 70/40 nsec rise/fall with 1 nF load 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down Internal bootstrap diode Outputs in phase with inputs Deadtime and interlocking function

In stock

Quantity	$ per unit	Savings
1-9	$1.02	0%
10-24	$0.74	27%
25-99	$0.67	34%
100-249	$0.60	42%
250-499	$0.56	45%
500	$0.56	45%
500 +	Contact sales

$1.02

Parameters

Operating Range	Industrial
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-8

Description

Key features

Key features
High voltage rail up to 600 V dV/dt immunity ± 50 V/nsec in full temperature range Driver current capability: 400 mA source 650 mA sink Switching times 70/40 nsec rise/fall with 1 nF load 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down Internal bootstrap diode Outputs in phase with inputs Deadtime and interlocking function