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L6389ED

L6389ED

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L6389EDTR

High voltage high and low-side driver

Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6389E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA...
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Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 400 mA source
    • 650 mA sink
  • Switching times 70/40 nsec rise/fall with 1 nF load
  • 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Deadtime and interlocking function
In stock
Quantity $ per unit Savings
1-9$1.540%
10-24$1.3810%
25-50$1.3015%
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$1.54
$1.54
or
Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6389E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA...
Read More

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 400 mA source
    • 650 mA sink
  • Switching times 70/40 nsec rise/fall with 1 nF load
  • 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Deadtime and interlocking function