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    L6389ED

    L6389ED

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    L6389EDTR

    High voltage high and low-side driver

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-8
    Description

    The L6389E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA...
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    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/nsec in full temperature range
    • Driver current capability:
      • 400 mA source
      • 650 mA sink
    • Switching times 70/40 nsec rise/fall with 1 nF load
    • 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down
    • Internal bootstrap diode
    • Outputs in phase with inputs
    • Deadtime and interlocking function
    In stock
    Quantity $ per unit Savings
    1-9$1.480%
    10-50$1.2615%
    50 + Contact sales
    $1.48
    $1.48
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-8
    Description

    The L6389E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/nsec in full temperature range
    • Driver current capability:
      • 400 mA source
      • 650 mA sink
    • Switching times 70/40 nsec rise/fall with 1 nF load
    • 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down
    • Internal bootstrap diode
    • Outputs in phase with inputs
    • Deadtime and interlocking function