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    L6391DTR

    L6391DTR

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    L6391D

    High voltage high and low-side driver

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-14
    Description

    The L6391 is a high voltage device manufactured with the BCD™ “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down...
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    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/nsec in full temperature range
    • Driver current capability:
      • 290 mA source
      • 430 mA sink
    • Switching times 75/35 nsec rise/fall with 1 nF load
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diode
    • Comparator for fault protections
    • Smart shutdown function
    • Adjustable deadtime
    • Interlocking function
    • Compact and simplified layout
    • Bill of material reduction
    • Effective fault protection
    • Flexible, easy and fast design
    In stock
    Quantity $ per unit Savings
    1-9$2.310%
    10-24$2.0910%
    25-99$1.9715%
    100-135$1.6827%
    135 + Contact sales
    $2.31
    $2.31
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-14
    Description

    The L6391 is a high voltage device manufactured with the BCD™ “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/nsec in full temperature range
    • Driver current capability:
      • 290 mA source
      • 430 mA sink
    • Switching times 75/35 nsec rise/fall with 1 nF load
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diode
    • Comparator for fault protections
    • Smart shutdown function
    • Adjustable deadtime
    • Interlocking function
    • Compact and simplified layout
    • Bill of material reduction
    • Effective fault protection
    • Flexible, easy and fast design
    Associated products