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L6393DTR

L6393DTR

L6393D

Active

Half bridge gate driver

Quantity $ per Unit Savings
1 - 9$2.160%
10 - 24$1.9410%
25 - 99$1.8315%
100 - 200$1.5628%
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In stock
$2.16
Parameter NameParameter Value
Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-14

The L6393 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.


The high-side (floating) section is designed to stand a voltage rail up to 600 V.


The logic inputs are CMOS/TTL compatible down to 3.3 V for the easy interfacing microcontroller/DSP.


The IC embeds an uncommitted comparator available for protections against overcurrent, overtemperature, etc.

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 290 mA source,
    • 430 mA sink
  • Switching times 75/35 nsec rise/fall with 1 nF load
  • 3.3 V, 5 V CMOS/TTL input comparators with hysteresis
  • Integrated bootstrap diode
  • Uncommitted comparator
  • Adjustable deadtime
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy and fast design