L6393D

Active

Half bridge gate driver
Learn More about L6393D

Quantity	$ per Unit	Savings
1 - 9	$2.16	0%
10 - 24	$1.94	10%
25 - 99	$1.83	15%
100 - 249	$1.56	28%
250 - 499	$1.47	32%
500	$1.28	41%
500 +	Contact Sales

Out of stock

$2.16

Notify me

Parameter

Parameter Name	Parameter Value
Operating Range	Industrial
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
ROHS Compliance Grade	Ecopack2
Grade	Industrial
Package Name	SO-14

Description

The L6393 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V.

The logic inputs are CMOS/TTL compatible down to 3.3 V for the easy interfacing microcontroller/DSP.

The IC embeds an uncommitted comparator available for protections against overcurrent, overtemperature, etc.

Key features

Key features
High voltage rail up to 600 V dV/dt immunity ± 50 V/nsec in full temperature range Driver current capability: 290 mA source, 430 mA sink Switching times 75/35 nsec rise/fall with 1 nF load 3.3 V, 5 V CMOS/TTL input comparators with hysteresis Integrated bootstrap diode Uncommitted comparator Adjustable deadtime Compact and simplified layout Bill of material reduction Flexible, easy and fast design

L6393DTR

L6393D

Active

Half bridge gate driver Learn More about L6393D

Half bridge gate driver
Learn More about L6393D