Shipping Delays — We are currently experiencing unusually high order volume, which is affecting order processing. As a result, shipments may be delayed. We are working to get orders out as quickly as possible.

$5.99 flat-rate shipping WORLDWIDE! From 12 thru October 26 — no minimum purchase required. Shop now!

L6393D

L6393D

Active

Free

L6393DTR

Half bridge gate driver

Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-14

The L6393 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V.The logic inputs are CMOS/TTL compatible down...
Read More

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 290 mA source,
    • 430 mA sink
  • Switching times 75/35 nsec rise/fall with 1 nF load
  • 3.3 V, 5 V CMOS/TTL input comparators with hysteresis
  • Integrated bootstrap diode
  • Uncommitted comparator
  • Adjustable deadtime
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy and fast design
In stock
Quantity $ per unit Savings
1-9$1.802%
10-24$1.3225%
25-99$1.2032%
100-249$1.0739%
250-499$1.0143%
500$0.9447%
Contact sales
$1.80
$1.76
or
Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-14

The L6393 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V.The logic inputs are CMOS/TTL compatible down...
Read More

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 290 mA source,
    • 430 mA sink
  • Switching times 75/35 nsec rise/fall with 1 nF load
  • 3.3 V, 5 V CMOS/TTL input comparators with hysteresis
  • Integrated bootstrap diode
  • Uncommitted comparator
  • Adjustable deadtime
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy and fast design