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M95P32-IXCST/EF

M95P32-IXCST/EF

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M95P32-IXMGT/E

Ultra low-power 32 Mbit Serial SPI Page EEPROM

Supply Voltage Min Volt1.6
Supply Voltage Max Volt3.6
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN US3A991.b.1.b.1
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameUFDFPN 4X4X0.55 8L P0.8

The M95P32-I and M95P32-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra-low power consumption, equivalent to that of EEPROM technology.The M95P32-I and M95P32-E are a 32-Mbit SPI page EEPROM...
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Key features
  • Interface
    • Supports serial peripheral interface (SPI) and dual/quad outputs
  • High speed frequency
    • Clock frequency up to 80MHz
    • Fast read single/dual/quad output with one dummy byte
      • Dual output data transfer up to 160Mbits/s
      • Quad output data transfer up to 320Mbits/s
  • Memory
    • 32 Mbits of page EEPROM
    • 64-Kbyte blocks, 4-Kbyte sectors
    • Page size: 512-byte
    • Two additional 512-byte identification pages
  • Supply voltage
  • Temperature
    • Operating temperature range:
      • -40 °C to +85 °C (industrial)
      • -40 °C to +105 °C (extended)
  • Performance
    • Write endurance: 500 kcycles on full temperature range
    • Data retention:
      • 100 years
      • 10 years after 500 kcycles
  • Ultra-low power consumption
    • 0.6 μA (typ) in deep power-down mode
    • 16 μA (typ) in Standby mode
    • 800 μA (typ) for read single at 10 MHz
    • 1.5 mA (typ) for page write
    • Current peak control < 3 mA
  • High write erase performance
    • Fast Write/Prog/Erase times:
      • 2 ms (typ) for byte and page write (includes auto erase and program) for 512 bytes
      • 1.2 ms (typ) for page program (512 bytes)
      • 1.1 ms (typ) for page erase
      • 1.3 ms (typ) for sector erase
      • 4 ms (typ) for block erase
      • 15 ms (typ) for chip erase
    • Page program with buffer load
  • Advanced features
    • ECC for high memory reliability (DEC,TED)
    • Schmitt trigger inputs for noise filtering
    • Output buffer programmable strength
    • Operating status flags for ISO26262
    • Software reset
    • Write protection by block, with top/bottom option
    • Unique ID upon request
    • Electronic identification
    • Supports SFDP (serial flash discoverable parameters) mode
    • JEDEC standard manufacturer identification
  • Package
    • ECOPACK2 (RoHS compliant) and halogen-free packages:
      • DFN8 4 x 4 mm
      • SO8N
      • WLCSP8
      • Unsawn wafer
  • ESD protection
    • HBM (human body model): 2000 V
In stock
Quantity $ per unit Savings
1-9$1.620%
10-25$1.489%
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$1.62
$1.62
Supply Voltage Min Volt1.6
Supply Voltage Max Volt3.6
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN US3A991.b.1.b.1
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameUFDFPN 4X4X0.55 8L P0.8

The M95P32-I and M95P32-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra-low power consumption, equivalent to that of EEPROM technology.The M95P32-I and M95P32-E are a 32-Mbit SPI page EEPROM...
Read More

Key features
  • Interface
    • Supports serial peripheral interface (SPI) and dual/quad outputs
  • High speed frequency
    • Clock frequency up to 80MHz
    • Fast read single/dual/quad output with one dummy byte
      • Dual output data transfer up to 160Mbits/s
      • Quad output data transfer up to 320Mbits/s
  • Memory
    • 32 Mbits of page EEPROM
    • 64-Kbyte blocks, 4-Kbyte sectors
    • Page size: 512-byte
    • Two additional 512-byte identification pages
  • Supply voltage
  • Temperature
    • Operating temperature range:
      • -40 °C to +85 °C (industrial)
      • -40 °C to +105 °C (extended)
  • Performance
    • Write endurance: 500 kcycles on full temperature range
    • Data retention:
      • 100 years
      • 10 years after 500 kcycles
  • Ultra-low power consumption
    • 0.6 μA (typ) in deep power-down mode
    • 16 μA (typ) in Standby mode
    • 800 μA (typ) for read single at 10 MHz
    • 1.5 mA (typ) for page write
    • Current peak control < 3 mA
  • High write erase performance
    • Fast Write/Prog/Erase times:
      • 2 ms (typ) for byte and page write (includes auto erase and program) for 512 bytes
      • 1.2 ms (typ) for page program (512 bytes)
      • 1.1 ms (typ) for page erase
      • 1.3 ms (typ) for sector erase
      • 4 ms (typ) for block erase
      • 15 ms (typ) for chip erase
    • Page program with buffer load
  • Advanced features
    • ECC for high memory reliability (DEC,TED)
    • Schmitt trigger inputs for noise filtering
    • Output buffer programmable strength
    • Operating status flags for ISO26262
    • Software reset
    • Write protection by block, with top/bottom option
    • Unique ID upon request
    • Electronic identification
    • Supports SFDP (serial flash discoverable parameters) mode
    • JEDEC standard manufacturer identification
  • Package
    • ECOPACK2 (RoHS compliant) and halogen-free packages:
      • DFN8 4 x 4 mm
      • SO8N
      • WLCSP8
      • Unsawn wafer
  • ESD protection
    • HBM (human body model): 2000 V