MASTERGAN1

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High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
Learn More about MASTERGAN1

Quantity	$ per Unit	Savings
1 - 9	$16.38	0%
10 - 24	$15.05	8%
25 - 99	$14.44	12%
100 - 249	$12.72	22%
250 - 499	$12.09	26%
500	$11.78	28%
500 +	Contact Sales

In stock

$16.38

Parameter

Parameter Name	Parameter Value
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
ROHS Compliance Grade	Ecopack2
Grade	Industrial
Package Name	VFQFPN 9X9X1.0 31L PITCH 0.6MM

Description

The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.

The integrated power GaNs have R_DS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MASTERGAN1 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.

The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.

The MASTERGAN1 operates in the industrial temperature range, -40°C to 125°C.

The device is available in a compact 9x9 mm QFN package.

Key features

Key features
600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: QFN 9 x 9 x 1 mm package R_DS(ON)= 150 mΩ I_DS(MAX) = 10 A Reverse current capability Zero reverse recovery loss UVLO protection on low-side and high-side Internal bootstrap diode Interlocking function Dedicated pin for shutdown functionality Accurate internal timing match 3.3 V to 15 V compatible inputs with hysteresis and pull-down Overtemperature protection Bill of material reduction Very compact and simplified layout Flexible, easy and fast design.

MASTERGAN1TR

MASTERGAN1

Active

High power density 600V half-bridge driver with two enhancement mode GaN HEMTs Learn More about MASTERGAN1

High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
Learn More about MASTERGAN1