MASTERGAN1 Active
High power density half-bridge high voltage driver with two 650V enhancement mode GaN HEMT
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 125.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tray |
| ROHS Compliance Grade | Ecopack2 |
| Grade | Industrial |
| Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
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The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.
The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN1 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The MASTERGAN1 operates in the industrial temperature range, -40°C to 125°C.
The device is available in a compact 9x9 mm QFN package.
In stock:
$12.77
| Range | Unit Price | Savings |
|---|---|---|
| 1 - 9 | $12.77 | 0% |
| 10 - 24 | $11.73 | 8% |
| 25 - 99 | $11.24 | 12% |
| 100 - 249 | $9.42 | 26% |
| 250 - 499 | $8.81 | 31% |
| 500 | $8.20 | 36% |
| 500 + | Contact Sales | |