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High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 125.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $7.52 | 8% |
| 10-24 | $5.82 | 17% |
| 25-99 | $5.39 | 23% |
| 100-249 | $4.93 | 29% |
| 250-499 | $4.66 | 33% |
| 500 | $4.49 | 36% |
| 500 + |
Contact sales |
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| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 125.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can...
Read More
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