MASTERGAN3

High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
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Quantity	$ per Unit	Savings
1 - 500	$12.45	0%
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$12.45

Key features
600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors in asymmetrical configuration: QFN 9 x 9 x 1 mm package R_DS(ON) = 225 mΩ (LS) + 450 mΩ (HS) I_DS(MAX) = 6.5 A (LS) + 4 A (HS) Reverse current capability Zero reverse recovery loss UVLO protection on low-side and high-side Internal bootstrap diode Interlocking function Dedicated pin for shutdown functionality Accurate internal timing match 3.3 V to 15 V compatible inputs with hysteresis and pull-down Overtemperature protection Bill of material reduction Very compact and simplified layout Flexible, easy and fast design.

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