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High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 225 mΩ and 450 mΩ for Low side and...
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ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 225 mΩ and 450 mΩ for Low side and...
Read More
|