MASTERGAN3TR

MASTERGAN3TR

MASTERGAN3

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High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs

Quantity $ per Unit Savings
1 - 500$12.450%
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Out of stock
$12.45
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM
Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors in asymmetrical configuration:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS)
    • IDS(MAX) = 6.5 A (LS) + 4 A (HS)
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.