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The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in asymmetrical half‑bridge configuration.
The integrated GaN power transistors have 650 V drain‑source breakdown voltage and RDS(ON) of 225 mΩ and 450 mΩ for low-side and high-side respectively, while the high-side of the embedded gate driver can be easily supplied by the integrated bootstrap diode
The MASTERGAN3 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The input pins' extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The MASTERGAN3 operates in the industrial temperature range, -40°C to 125°C.
The device is available in a compact 9x9 mm QFN package.
