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MASTERGAN5

MASTERGAN5

MASTERGAN5TR

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High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs

Quantity $ per Unit Savings
1 - 500$12.960%
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Out of stock
$12.96
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM

The MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors.


The integrated GaN power transistors have 650 V drain‑source blocking voltage and RDS(ON) of 450 mΩ, while the high-side of the embedded gate driver can be easily supplied by the integrated bootstrap diode


The MASTERGAN5 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.


The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.



The MASTERGAN5 operates in the industrial temperature range, -40°C to 125°C.


The device is available in a compact 9x9 mm QFN package.

Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 450 mΩ
    • IDS(MAX) = 4 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.