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High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 450 mΩ, while the high side of the embedded gate...
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ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 450 mΩ, while the high side of the embedded gate...
Read More
|