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MJD122-1

Low voltage NPN power Darlington transistor

Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameIPAK

This device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

Key features
  • Low collector-emitter saturation voltage
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
In stock
Quantity $ per unit Savings
1-9$1.450%
10-24$1.2316%
25-74$0.8840%
75-299$0.5960%
300-500$0.5860%
Contact sales
$1.45
$1.45
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameIPAK

This device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

Key features
  • Low collector-emitter saturation voltage
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode