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RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain,...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $11.11 | 0% |
10-99 | $9.53 | 14% |
100-249 | $7.94 | 29% |
250-500 | $7.47 | 33% |
500 + |
Contact sales |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain,...
Read More
|