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PD54003-E

Active

RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Quantity $ per Unit Savings
1 - 9$11.660%
10 - 20$10.5410%
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Out of stock
$11.66
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true surface-mount device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly.

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 3 W with 12 dB gain @ 500 MHz
  • New RF plastic package