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PD54003-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain,...
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Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 3 W with 12 dB gain @ 500 MHz
  • New RF plastic package
In stock
Quantity $ per unit Savings
1-9$11.110%
10-20$9.5314%
Contact sales
$11.11
$11.11
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain,...
Read More

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 3 W with 12 dB gain @ 500 MHz
  • New RF plastic package