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RF2L16080CF2

80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameA2

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally input matched for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the European Directive 2002/95/EC
Out of Stock
Quantity $ per unit Savings
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160-479$52.7221%
480-500$51.8923%
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$67.06
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameA2

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally input matched for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the European Directive 2002/95/EC