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RF2L16180CF2

180 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameB2

The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz. It can be used in class AB, B or C for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internal input matching for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the european directive 2002/95/EC
Out of Stock
Quantity $ per unit Savings
1-119$124.060%
120-239$105.4715%
240-479$103.7916%
480-500$103.7616%
Contact sales
$124.06
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameB2

The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz. It can be used in class AB, B or C for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internal input matching for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the european directive 2002/95/EC