RF2L42008CG2

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8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

Quantity $ per Unit Savings
1 - 299$37.180%
300 - 500$30.1619%
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$37.18
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeN/A
GradeIndustrial
Package NameE2
Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the european directive 2002/95/EC