RF2L42008CG2

Name: RF2L42008CG2
Brand: STMicroelectronics
SKU: RF2L42008CG2
Price: 45 USD
Availability: OutOfStock

Active

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
Learn More about RF2L42008CG2

Quantity	$ per Unit	Savings
1 - 299	$45.00	0%
300 - 500	$36.46	19%
500 +	Contact Sales

Out of stock

$45.00

Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	N/A
Grade	Industrial
Package Name	E2

Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats.

Key features

Key features
High efficiency and linear gain operations Integrated ESD protection Internally matched for ease of use Large positive and negative gate-source voltage range for improved class C operation Excellent thermal stability, low HCI drift In compliance with the European directive 2002/95/EC

RF2L42008CG2

Active

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor Learn More about RF2L42008CG2

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
Learn More about RF2L42008CG2