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RF3L05150CB4

150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameLBB

The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate-source voltage range for improved class C operation
  • In compliance with the european directive 2002/95/EC
In stock
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$153.06
$153.06
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameLBB

The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate-source voltage range for improved class C operation
  • In compliance with the european directive 2002/95/EC