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    RF3L05150CB4

    150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantN/A
    GradeIndustrial
    Package NameLBB
    Description

    The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.

    Key features
    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate-source voltage range for improved class C operation
    • In compliance with the european directive 2002/95/EC
    In stock
    Quantity $ per unit Savings
    1$160.630%
    1 + Contact sales
    $160.63
    $160.63
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantN/A
    GradeIndustrial
    Package NameLBB
    Description

    The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.

    Key features
    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate-source voltage range for improved class C operation
    • In compliance with the european directive 2002/95/EC