🎅 Flat-rate shipping is live! - Only $5.99 worldwide delivery until Dec. 15th! No min purchase or code needed.

Active

RF3L05250CB4

250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameLBB

The RF3L05250CB4 is a 250 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate-source voltage range for improved class C operation
  • In compliance with the European directive 2002/95/EC
In stock
Quantity $ per unit Savings
1$160.080%
Contact sales
$160.08
$160.08
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameLBB

The RF3L05250CB4 is a 250 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate-source voltage range for improved class C operation
  • In compliance with the European directive 2002/95/EC