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RF4L10700CB4

Name: RF4L10700CB4
Brand: STMicroelectronics
SKU: RF4L10700CB4
Price: 227.67 USD
Availability: OutOfStock

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700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
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Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	N/A
Grade	Industrial
Package Name	D4E

Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation. It is qualified up to 40 V operation.

Key features

Key features
High efficiency and linear gain operations Integrated ESD protection Internally matched pair transistors in push-pull configuration Large positive and negative gate-source voltage range for improved class C operation Optimized for Doherty applications Excellent thermal stability, low HCI drift In compliance with the European directive 2002/95/EC

RF4L10700CB4

Active

700 W, 40 V, HF to 1 GHz RF power LDMOS transistor Learn More about RF4L10700CB4

700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
Learn More about RF4L10700CB4