RF4L10700CB4

Active

700 W, 40 V, HF to 1 GHz RF power LDMOS transistor

Quantity $ per Unit Savings
1 - 500$227.670%
Contact Sales
Out of stock
$227.67
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantN/A
GradeIndustrial
Package NameD4E

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation. It is qualified up to 40 V operation.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched pair transistors in push-pull configuration
  • Large positive and negative gate-source voltage range for improved class C operation
  • Optimized for Doherty applications
  • Excellent thermal stability, low HCI drift
  • In compliance with the European directive 2002/95/EC