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RF5L052K0CB4

2000 W, 50 V, HF to 500 MHz RF Power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantN/A
GradeIndustrial
Package NameD4E

The RF5L052K0CB4 is a 2000 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for high power and high ruggedness, suitable for...
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Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate-source voltage range for improved class C operation
  • High breakdown voltage enable class E operation
  • On chip RC network enable high stability and ruggedness
  • Excellent thermal stability, low HCI drift
  • In compliance with the european directive 2002/95/EC
Out of Stock
Quantity $ per unit Savings
1-9$182.710%
10-19$171.136%
20-49$164.6910%
50-99$164.2110%
100-500$160.3512%
Contact sales
$182.71
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantN/A
GradeIndustrial
Package NameD4E

The RF5L052K0CB4 is a 2000 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for high power and high ruggedness, suitable for...
Read More

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate-source voltage range for improved class C operation
  • High breakdown voltage enable class E operation
  • On chip RC network enable high stability and ruggedness
  • Excellent thermal stability, low HCI drift
  • In compliance with the european directive 2002/95/EC