SCT30N120

Active
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
Quantity $ per Unit Savings
1 - 9$19.870%
10 - 24$17.7011%
25 - 99$16.3618%
100 - 249$15.5522%
250 - 499$15.2123%
500$14.7526%
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In stock:
$19.86
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very tight variation of on-resistance vs. temperature
  • Very high operating temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance