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SCTH40N120G2V7AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H2PAK-7 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameH2PAK-7

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
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Key features
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Source sensing pin for increased efficiency
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Quantity $ per unit Savings
1-9$19.310%
10$17.1611%
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$19.31
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameH2PAK-7

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More

Key features
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Source sensing pin for increased efficiency