SCTH40N120G2V7AG Active

Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack1
GradeAutomotive
Package NameH2PAK-7
Key Features
  • AEC-Q101 qualified
  • Very high operating junction temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Out of stock
$15.74
Range Unit Price Savings
1 - 9$15.740%
10 - 24$14.478%
25 - 99$13.8712%
100 - 249$12.0024%
250 - 499$11.6226%
500$10.8731%
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