SCTH40N120G2V7AG Active

Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
Quantity $ per Unit Savings
1 - 9$15.740%
10 - 24$14.478%
25 - 99$13.8712%
100 - 249$12.0024%
250 - 499$11.6226%
500$10.8731%
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Out of stock
$15.74
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack1
GradeAutomotive
Package NameH2PAK-7
Key features
  • AEC-Q101 qualified
  • Very high operating junction temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance