Currency
USD
  • Language
    English
    • Toggle Nav
    Cart 0
    Search
    Advanced Search
    Menu
    Account
    Settings
  • Language
    English
    • Currency
    USD

    Flat $5.99 shipping rate worldwide throughout May - no code needed! Start your design today. Flat $5.99 shipping rate worldwide throughout May - no code needed! Start your design today. Flat $5.99 shipping rate worldwide throughout May - no code needed! Start your design today. Flat $5.99 shipping rate worldwide throughout May - no code needed! Start your design today. Flat $5.99 shipping rate worldwide throughout May - no code needed! Start your design today.

    main product photo

    SCTWA90N65G2V

    Active

    Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
    Learn More about SCTWA90N65G2V

    Quantity $ per Unit Savings
    1 - 9$37.110%
    10 - 24$34.248%
    25 - 99$32.6912%
    100 - 500$29.2321%
    500 + Contact Sales
    Save to My List Compare
    In stock
    $37.11
    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NameHIP247 long leads

    This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

    Key features
    • High speed switching performance
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitances