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SCTWA90N65G2V

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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package

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$37.11
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameHIP247 long leads

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features
  • High speed switching performance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances