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    SCTWA90N65G2V Active

    Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
    Learn More about SCTWA90N65G2V
    Quantity $ per Unit Savings
    1 - 9$25.630%
    10 - 24$23.648%
    25 - 99$22.5712%
    100 - 249$19.9122%
    250 - 499$18.5927%
    500$16.9934%
    500 + Contact Sales
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    $25.63
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NameHIP247 long leads
    Key features
    • High speed switching performance
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitances
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