ST1510FX

High voltage fast-switching NPN Power transistor

The device is manufactured using new Diffused Collector in Planar technology adopting new and enhanced high voltage structure 1 (E.H.V.S.1).

Key features
In compliance with the 2002/93/EC European directive State-of-the-art technology:\t Diffused collector “Enhanced generation” EHVS1\t Low base-drive requirements More stable performances versus operating temperature variation Fully insulated power package U.L. compliant Tighter h_FE range at operating collector current

In stock

$2.55

The device is manufactured using new Diffused Collector in Planar technology adopting new and enhanced high voltage structure 1 (E.H.V.S.1).

Key features
In compliance with the 2002/93/EC European directive State-of-the-art technology:\t Diffused collector “Enhanced generation” EHVS1\t Low base-drive requirements More stable performances versus operating temperature variation Fully insulated power package U.L. compliant Tighter h_FE range at operating collector current