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    STAC3932B

    HF/VHF/UHF RF power N-channel MOSFET

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeLoose Piece
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameSTAC780-4B
    Description

    The STAC3932B is an N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 250 MHz.

    Key features
    Key features
    • Excellent thermal stability
    • Common source push-pull configuration
    • POUT = 580 W typ. with 24.6 dB gain at 123 MHz
    • In compliance with the 2002/95/EC European directive
    • ST air-cavity STAC packaging technology
    Out of Stock
    Quantity $ per unit Savings
    1-79$139.640%
    80-500$117.9116%
    500 + Contact sales
    $139.64
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeLoose Piece
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameSTAC780-4B
    Description

    The STAC3932B is an N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 250 MHz.

    Key features
    Key features
    • Excellent thermal stability
    • Common source push-pull configuration
    • POUT = 580 W typ. with 24.6 dB gain at 123 MHz
    • In compliance with the 2002/95/EC European directive
    • ST air-cavity STAC packaging technology