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STB11NM80T4

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N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package

Quantity $ per Unit Savings
1 - 9$8.140%
10 - 24$7.379%
25 - 40$7.0314%
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Out of stock
$8.14
Parameter NameParameter Value
Operating Temp Min Celsius-65.0
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Key features
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on)*Qg in the industry