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STD10NM60ND

N-channel 600 V, 570 mOhm typ., 8 A, FDmesh II Power MOSFET in a DPAK package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

Key features
  • Fast-recovery body diode
  • Low gate charge and input capacitance
  • Low on-resistance RDS(on)
  • 100% avalanche tested
  • High dv/dt ruggedness
In stock
Quantity $ per unit Savings
1-9$2.800%
10-99$1.8235%
100-499$1.2655%
500$1.0264%
Contact sales
$2.80
$2.80
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

Key features
  • Fast-recovery body diode
  • Low gate charge and input capacitance
  • Low on-resistance RDS(on)
  • 100% avalanche tested
  • High dv/dt ruggedness