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STG200G65FD8AG

Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameDICE

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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Key features
  • AEC-Q101 qualified
  • Low-loss series IGBT
  • Low VCE(sat) = 1.52 V (typ.) at IC = 200 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C
Out of Stock
Quantity $ per unit Savings
1-9$8.860%
10-24$7.5914%
25-99$6.8822%
100-249$6.3229%
250-499$5.9533%
500$5.5837%
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$8.86
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameDICE

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More

Key features
  • AEC-Q101 qualified
  • Low-loss series IGBT
  • Low VCE(sat) = 1.52 V (typ.) at IC = 200 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C