📢 Flat rate shipping below $10 in multiple countries! Limited offer ends May 31 🛒 Order now

Active

STG200M65F2D11AG

Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D11 packing

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack2
GradeAutomotive
Package NameRECONSTRUCTED WAFER D11

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More

Key features
  • AEC-Q101 qualified
  • Low-loss series IGBT
  • Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C
  • 6 µs minimum short-circuit withstanding time at TJ = 150 °C
Out of Stock
Quantity $ per unit Savings
1-500$0.000%
Contact sales
$0.00
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack2
GradeAutomotive
Package NameRECONSTRUCTED WAFER D11

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More

Key features
  • AEC-Q101 qualified
  • Low-loss series IGBT
  • Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C
  • 6 µs minimum short-circuit withstanding time at TJ = 150 °C