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STG200M65F2D11AG
Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D11 packing
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Loose Piece |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | RECONSTRUCTED WAFER D11 |
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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|
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Loose Piece |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | RECONSTRUCTED WAFER D11 |
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More
|