STG200M65F2D11AG

Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D11 packing

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Loose Piece
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	RECONSTRUCTED WAFER D11

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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Key features

Key features
AEC-Q101 qualified Low-loss series IGBT Low V_CE(sat) = 1.55 V (typ.) at I_C = 200 A Positive V_CE(sat) temperature coefficient Tight parameter distribution Maximum junction temperature: T_J = 175 °C 6 µs minimum short-circuit withstanding time at T_J = 150 °C

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Loose Piece
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	RECONSTRUCTED WAFER D11

Description

Key features

Key features
AEC-Q101 qualified Low-loss series IGBT Low V_CE(sat) = 1.55 V (typ.) at I_C = 200 A Positive V_CE(sat) temperature coefficient Tight parameter distribution Maximum junction temperature: T_J = 175 °C 6 µs minimum short-circuit withstanding time at T_J = 150 °C