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STG25H120F2D7

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1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
Learn More about STG25H120F2D7

Quantity	$ per Unit	Savings
1 - 500	$0.00	0%
500 +	Contact Sales

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Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
ROHS Compliance Grade	N/A
Grade	Industrial
Package Name	D.SCRIB.100% VI STAT

Key features
5 μs of short-circuit withstand time Low V_CE(sat)= 2.1 V (typ.) at IC = 25 A Tight parameter distribution Low switching-off losses Safer paralleling

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