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STG25H120F2D7

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1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing

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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
ROHS Compliance GradeN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

This die is an IGBT developed using an advanced proprietary trench gate and field-stop structure. This device is a part of the H2 series IGBTs.

Key features
  • 5 μs of short-circuit withstand time
  • Low VCE(sat)= 2.1 V (typ.) at IC = 25 A
  • Tight parameter distribution
  • Low switching-off losses
  • Safer paralleling