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    STG25H120F2D7

    1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantN/A
    GradeIndustrial
    Package NameD.SCRIB.100% VI STAT
    Description

    This die is an IGBT developed using an advanced proprietary trench gate and field-stop structure. This device is a part of the H2 series IGBTs.

    Key features
    Key features
    • 5 μs of short-circuit withstand time
    • Low VCE(sat)= 2.1 V (typ.) at IC = 25 A
    • Tight parameter distribution
    • Low switching-off losses
    • Safer paralleling
    Out of Stock
    Quantity $ per unit Savings
    1-500$0.000%
    500 + Contact sales
    $0.00
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantN/A
    GradeIndustrial
    Package NameD.SCRIB.100% VI STAT
    Description

    This die is an IGBT developed using an advanced proprietary trench gate and field-stop structure. This device is a part of the H2 series IGBTs.

    Key features
    Key features
    • 5 μs of short-circuit withstand time
    • Low VCE(sat)= 2.1 V (typ.) at IC = 25 A
    • Tight parameter distribution
    • Low switching-off losses
    • Safer paralleling