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    STG25H120F2D7

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    1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
    Learn More about STG25H120F2D7

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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    ROHS Compliance GradeN/A
    GradeIndustrial
    Package NameD.SCRIB.100% VI STAT

    This die is an IGBT developed using an advanced proprietary trench gate and field-stop structure. This device is a part of the H2 series IGBTs.

    Key features
    • 5 μs of short-circuit withstand time
    • Low VCE(sat)= 2.1 V (typ.) at IC = 25 A
    • Tight parameter distribution
    • Low switching-off losses
    • Safer paralleling