Toggle Nav
Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD
    main product photo

    Active

    STG25M120F3D7

    1200 V, 25 A trench gate field-stop M series low-loss IGBT die in D7 packing

    Parameters
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantN/A
    GradeIndustrial
    Package NameD.SCRIB.100% VI STAT
    Description

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore,...
    Read More

    Key features
    Key features
    • 10 µs of short-circuit withstand time
    • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C
    Out of Stock
    Quantity $ per unit Savings
    1-500$0.000%
    500 + Contact sales
    $0.00
    Parameters
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantN/A
    GradeIndustrial
    Package NameD.SCRIB.100% VI STAT
    Description

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore,...
    Read More

    Key features
    Key features
    • 10 µs of short-circuit withstand time
    • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C