|Operating Temp Min Celsius||-55.0|
|Operating Temp Max Celsius||175.0|
|Packing Type||Not Applicable|
|ROHS Compliance Grade||N/A|
|Package Name||D.SCRIB.100% VI STAT|
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.