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1200 V, 8 A trench gate field-stop M series low-loss IGBT die in D7 packing
| Operating Temp Min Celsius | -55.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Not Applicable |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | D.SCRIB.100% VI STAT |
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore,...
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| Operating Temp Min Celsius | -55.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Not Applicable |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | D.SCRIB.100% VI STAT |
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore,...
Read More
|