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STGD4H60DF

Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a...
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A
  • Tight parameter distribution
  • Low thermal resistance
  • Short-circuit rated
  • Soft and fast recovery antiparallel diode
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Quantity $ per unit Savings
1-9$0.990%
10-50$0.8118%
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$0.99
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Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a...
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A
  • Tight parameter distribution
  • Low thermal resistance
  • Short-circuit rated
  • Soft and fast recovery antiparallel diode