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    STGP4M65DF2

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    Trench gate field-stop IGBT, M series 650 V, 4 A low loss
    Learn More about STGP4M65DF2

    Quantity $ per Unit Savings
    1 - 9$1.070%
    10 - 24$0.9610%
    25 - 99$0.9214%
    100 - 499$0.7530%
    500$0.6242%
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    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key features
    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.6 V (typ.) @ IC = 4 A
    • Tight parameter distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode