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STGSH50M120D

ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameACEPACK SMIT

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is optimized both in conduction and switching losses for hard switching commutation, where short-circuit ruggedness is an essential feature. A...
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Key features
  • Low-loss and short-circuit rugged IGBTs
  • Maximum junction temperature: TJ = 175 °C
  • VCE(sat) = 1.8 V (typ.) @ IC = 50 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient
  • Soft and fast-recovery antiparallel diode
  • Isolation rating of 3.4 kVrms/min
In stock
Quantity $ per unit Savings
1-9$19.740%
10-99$17.4012%
100-199$15.0324%
200-500$14.5626%
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$19.74
$19.74
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameACEPACK SMIT

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is optimized both in conduction and switching losses for hard switching commutation, where short-circuit ruggedness is an essential feature. A...
Read More

Key features
  • Low-loss and short-circuit rugged IGBTs
  • Maximum junction temperature: TJ = 175 °C
  • VCE(sat) = 1.8 V (typ.) @ IC = 50 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient
  • Soft and fast-recovery antiparallel diode
  • Isolation rating of 3.4 kVrms/min