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Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

Quantity $ per Unit Savings
1 - 9$8.060%
10 - 24$7.2810%
25 - 40$6.9514%
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Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
Packing TypeTube
RoHs compliantEcopack2
Package NameTO-247

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key features
  • 10 μs of short-circuit withstand time
  • VCE(sat)= 1.85 V (typ.) @ IC= 40 A
  • Tight parameters distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and fast recovery antiparallel diode