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STGWT60H65FB

Active

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Quantity $ per Unit Savings
1 - 9$5.120%
10 - 24$4.6110%
25 - 99$4.3615%
100 - 500$3.7726%
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In stock
$5.13
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameTO-3P

This device is an IGBT developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key features
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat)= 1.6 V (typ.) @ IC= 60 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance