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    STH310N10F7-6

    N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1 (*)
    GradeIndustrial
    Package NameH2PAK-6
    Description

    These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Among the lowest RDS(on) on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness
    In stock
    Quantity $ per unit Savings
    1-9$5.800%
    10-99$4.3026%
    100-500$3.1446%
    500 + Contact sales
    $5.80
    $5.80
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1 (*)
    GradeIndustrial
    Package NameH2PAK-6
    Description

    These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Among the lowest RDS(on) on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness
    Associated products