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    STL12N10F7

    N-channel 100 V, 11.3 mΩ typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePOWERFLAT 3.3X3.
    Description

    This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness
    Out of Stock
    Quantity $ per unit Savings
    1-9$1.410%
    10-99$1.1916%
    100-499$0.9731%
    500$0.8142%
    500 + Contact sales
    $1.41
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePOWERFLAT 3.3X3.
    Description

    This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness