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STL8P4LLF6

P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 3.3x3.3

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
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Quantity $ per unit Savings
1-9$1.350%
10-99$1.1912%
100-499$0.9232%
500$0.7743%
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$1.35
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 3.3x3.3

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss