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    STL9P4LF6AG

    Automotive P-channel enhancement mode Power MOSFET STripFET F6 -40 V, -8 A in a PowerFLAT 3.3x3.3 package

    Parameters
    Operating RangeAutomotive
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NamePowerFLAT 3.3x3.3
    Description

    This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key features
    Key features
    • AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss
    • Logic level
    Out of Stock
    Quantity $ per unit Savings
    1-500$1.490%
    500 + Contact sales
    $1.49
    Parameters
    Operating RangeAutomotive
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NamePowerFLAT 3.3x3.3
    Description

    This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key features
    Key features
    • AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss
    • Logic level