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    STM32F411CCU7TR

    STM32F411CCU7TR

    STM32F411CCU7

    STM32F411CCU7

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    STM32F411CCU6TR

    High-performance access line, Arm Cortex-M4 core with DSP and FPU, 256 Kbytes of Flash memory, 100 MHz CPU, ART Accelerator

    Parameters
    Supply Voltage Min Volt1.7
    Supply Voltage Max Volt3.6
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius85.0
    CoreArm Cortex-M4
    ECCN US3A991.a.2
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameUFQFPN 48 7x7x0.55 mm
    Description

    The STM32F411xC/xE devices are based on the high-performance Arm® Cortex® -M4 32-bit RISC core operating at a frequency of up to 100 MHz. The Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types....
    Read More

    Key features
    Key features
    • Dynamic Efficiency Line with BAM (Batch Acquisition Mode)
      • 1.7 V to 3.6 V power supply
      • - 40°C to 85/105/125 °C temperature range
    • Core: Arm® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
    • Memories
      • Up to 512 Kbytes of Flash memory
      • 128 Kbytes of SRAM
    • Clock, reset and supply management
      • 1.7 V to 3.6 V application supply and I/Os
      • POR, PDR, PVD and BOR
      • 4-to-26 MHz crystal oscillator
      • Internal 16 MHz factory-trimmed RC
      • 32 kHz oscillator for RTC with calibration
      • Internal 32 kHz RC with calibration
    • Power consumption
      • Run: 100 μA/MHz (peripheral off)
      • Stop (Flash in Stop mode, fast wakeup time): 42 μA Typ @ 25C; 65 μA max @25 °C
      • Stop (Flash in Deep power down mode, slow wakeup time): down to 9 μA @ 25 °C; 28 μA max @25 °C
      • Standby: 1.8 μA @25 °C / 1.7 V without RTC; 11 μA @85 °C @1.7 V
      • VBAT supply for RTC: 1 μA @25 °C
    • 1×12-bit, 2.4 MSPS A/D converter: up to 16 channels
    • General-purpose DMA: 16-stream DMA controllers with FIFOs and burst support
    • Up to 11 timers: up to six 16-bit, two 32-bit timers up to 100 MHz, each with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input, two watchdog timers (independent and window) and a SysTick timer
    • Debug mode
      • Serial wire debug (SWD) & JTAG interfaces
      • Cortex®-M4 Embedded Trace Macrocell™
    • Up to 81 I/O ports with interrupt capability
      • Up to 78 fast I/Os up to 100 MHz
      • Up to 77 5 V-tolerant I/Os
    • Up to 13 communication interfaces
      • Up to 3 x I2C interfaces (SMBus/PMBus)
    In stock
    Quantity $ per unit Savings
    1-9$6.510%
    10-24$5.8810%
    25-99$5.6114%
    100-249$4.8725%
    250-499$4.6529%
    500-999$4.2435%
    1000-10000$3.9439%
    10000 + Contact sales
    $6.51
    $6.51
    Parameters
    Supply Voltage Min Volt1.7
    Supply Voltage Max Volt3.6
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius85.0
    CoreArm Cortex-M4
    ECCN US3A991.a.2
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameUFQFPN 48 7x7x0.55 mm
    Description

    The STM32F411xC/xE devices are based on the high-performance Arm® Cortex® -M4 32-bit RISC core operating at a frequency of up to 100 MHz. The Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types....
    Read More

    Key features
    Key features
    • Dynamic Efficiency Line with BAM (Batch Acquisition Mode)
      • 1.7 V to 3.6 V power supply
      • - 40°C to 85/105/125 °C temperature range
    • Core: Arm® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
    • Memories
      • Up to 512 Kbytes of Flash memory
      • 128 Kbytes of SRAM
    • Clock, reset and supply management
      • 1.7 V to 3.6 V application supply and I/Os
      • POR, PDR, PVD and BOR
      • 4-to-26 MHz crystal oscillator
      • Internal 16 MHz factory-trimmed RC
      • 32 kHz oscillator for RTC with calibration
      • Internal 32 kHz RC with calibration
    • Power consumption
      • Run: 100 μA/MHz (peripheral off)
      • Stop (Flash in Stop mode, fast wakeup time): 42 μA Typ @ 25C; 65 μA max @25 °C
      • Stop (Flash in Deep power down mode, slow wakeup time): down to 9 μA @ 25 °C; 28 μA max @25 °C
      • Standby: 1.8 μA @25 °C / 1.7 V without RTC; 11 μA @85 °C @1.7 V
      • VBAT supply for RTC: 1 μA @25 °C
    • 1×12-bit, 2.4 MSPS A/D converter: up to 16 channels
    • General-purpose DMA: 16-stream DMA controllers with FIFOs and burst support
    • Up to 11 timers: up to six 16-bit, two 32-bit timers up to 100 MHz, each with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input, two watchdog timers (independent and window) and a SysTick timer
    • Debug mode
      • Serial wire debug (SWD) & JTAG interfaces
      • Cortex®-M4 Embedded Trace Macrocell™
    • Up to 81 I/O ports with interrupt capability
      • Up to 78 fast I/Os up to 100 MHz
      • Up to 77 5 V-tolerant I/Os
    • Up to 13 communication interfaces
      • Up to 3 x I2C interfaces (SMBus/PMBus)
    Associated products