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    STM32F413VGH6

    STM32F413VGH6

    STM32F413VGT6TR

    STM32F413VGT6TR

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    STM32F413VGT3

    High-performance access line, Arm Cortex-M4 core with DSP and FPU, 1 MByte of Flash memory, 100 MHz CPU, ART Accelerator, DFSDM

    Parameters
    Supply Voltage Min Volt1.7
    Supply Voltage Max Volt3.6
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    CoreArm Cortex-M4
    ECCN US3A991.a.2
    ECCN EUNEC
    Packing TypeTray
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameLQFP 100 14x14x1.4 mm
    Description

    The STM32F413xG/H devices are based on the high-performance Arm® Cortex®-M4 32-bit RISC core operating at a frequency of up to 100 MHz. Their Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types....
    Read More

    Key features
    Key features
    • Dynamic Efficiency Line with eBAM (enhanced Batch Acquisition Mode)
      • 1.7 V to 3.6 V power supply
      • -40 °C to 85/105/125 °C temperature range
    • Core: Arm® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/ 1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
    • Memories
      • Up to 1.5 Mbytes of Flash memory
      • 320 Kbytes of SRAM
      • Flexible external static memory controller with up to 16-bit data bus: SRAM, PSRAM, NOR Flash memory
      • Dual mode Quad-SPI interface
    • LCD parallel interface, 8080/6800 modes
    • Clock, reset and supply management
      • 1.7 to 3.6 V application supply and I/Os
      • POR, PDR, PVD and BOR
      • 4-to-26 MHz crystal oscillator
      • Internal 16 MHz factory-trimmed RC
      • 32 kHz oscillator for RTC with calibration
      • Internal 32 kHz RC with calibration
    • Power consumption
      • Run: 112 μA/MHz (peripheral off)
      • Stop (Flash in Stop mode, fast wakeup time): 42 μA Typ.; 80 μA max @25 °C
      • Stop (Flash in Deep power down mode, slow wakeup time): 15 μA Typ.; 46 μA max @25 °C
      • Standby without RTC: 1.1 μA Typ.; 14.7 μA max at @85 °C
      • VBAT supply for RTC: 1 μA @25 °C
    • 2x12-bit D/A converters
    • 1×12-bit, 2.4 MSPS ADC: up to 16 channels
    • 6x digital filters for sigma delta modulator, 12x PDM interfaces, with stereo microphone and sound source localization support
    • General-purpose DMA: 16-stream DMA
    • Up to 18 timers: up to twelve 16-bit timers, two 32-bit timers up to 100 MHz each with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input, two watchdog timers (independent and window), one SysTick timer, and a low-power timer
    • Debug mode
      • Serial wire debug (SWD) & JTAG
        • <
    Out of Stock
    Quantity $ per unit Savings
    1-9$14.540%
    10$13.378%
    10 + Contact sales
    $14.54
    Parameters
    Supply Voltage Min Volt1.7
    Supply Voltage Max Volt3.6
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    CoreArm Cortex-M4
    ECCN US3A991.a.2
    ECCN EUNEC
    Packing TypeTray
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameLQFP 100 14x14x1.4 mm
    Description

    The STM32F413xG/H devices are based on the high-performance Arm® Cortex®-M4 32-bit RISC core operating at a frequency of up to 100 MHz. Their Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types....
    Read More

    Key features
    Key features
    • Dynamic Efficiency Line with eBAM (enhanced Batch Acquisition Mode)
      • 1.7 V to 3.6 V power supply
      • -40 °C to 85/105/125 °C temperature range
    • Core: Arm® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/ 1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
    • Memories
      • Up to 1.5 Mbytes of Flash memory
      • 320 Kbytes of SRAM
      • Flexible external static memory controller with up to 16-bit data bus: SRAM, PSRAM, NOR Flash memory
      • Dual mode Quad-SPI interface
    • LCD parallel interface, 8080/6800 modes
    • Clock, reset and supply management
      • 1.7 to 3.6 V application supply and I/Os
      • POR, PDR, PVD and BOR
      • 4-to-26 MHz crystal oscillator
      • Internal 16 MHz factory-trimmed RC
      • 32 kHz oscillator for RTC with calibration
      • Internal 32 kHz RC with calibration
    • Power consumption
      • Run: 112 μA/MHz (peripheral off)
      • Stop (Flash in Stop mode, fast wakeup time): 42 μA Typ.; 80 μA max @25 °C
      • Stop (Flash in Deep power down mode, slow wakeup time): 15 μA Typ.; 46 μA max @25 °C
      • Standby without RTC: 1.1 μA Typ.; 14.7 μA max at @85 °C
      • VBAT supply for RTC: 1 μA @25 °C
    • 2x12-bit D/A converters
    • 1×12-bit, 2.4 MSPS ADC: up to 16 channels
    • 6x digital filters for sigma delta modulator, 12x PDM interfaces, with stereo microphone and sound source localization support
    • General-purpose DMA: 16-stream DMA
    • Up to 18 timers: up to twelve 16-bit timers, two 32-bit timers up to 100 MHz each with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input, two watchdog timers (independent and window), one SysTick timer, and a low-power timer
    • Debug mode
      • Serial wire debug (SWD) & JTAG
        • <
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