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STP11NM60ND

N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a TO-220 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

Key features
  • Fast-recovery body diode
  • Low gate charge and input capacitance
  • Low on-resistance RDS(on)
  • 100% avalanche tested
  • High dv/dt ruggedness
In stock
Quantity $ per unit Savings
1-9$2.950%
10-24$2.6311%
25-99$2.5015%
100-249$2.2524%
250-499$2.1627%
500$2.0830%
Contact sales
$2.95
$2.95
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

Key features
  • Fast-recovery body diode
  • Low gate charge and input capacitance
  • Low on-resistance RDS(on)
  • 100% avalanche tested
  • High dv/dt ruggedness