STPSC10C065RY

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Automotive 650 V, 10 A Silicon Carbide Power Schottky Diode

Quantity $ per Unit Savings
1 - 9$3.930%
10 - 99$3.5410%
100 - 499$2.9026%
500$2.4737%
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In stock
$3.93
or
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameI2PAK

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions.

Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Recommended to PFC applications
  • PPAP capable
  • ECOPACK®2 compliant
    component