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STPSC10C065RY

Name: STPSC10C065RY
Brand: STMicroelectronics
SKU: STPSC10C065RY
Price: 3.68 USD
Availability: InStock

NRND

Automotive 650 V, 10 A Silicon Carbide Power Schottky Diode
Learn More about STPSC10C065RY

Quantity	$ per Unit	Savings
1 - 9	$3.68	0%
10 - 99	$3.31	10%
100 - 499	$2.72	26%
500	$2.31	37%
500 +	Contact Sales

In stock

$3.68

Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	I2PAK

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions.

Key features

Key features
AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature Recommended to PFC applications PPAP capable ECOPACK^®2 compliant component

STPSC10C065RY

NRND

Automotive 650 V, 10 A Silicon Carbide Power Schottky Diode Learn More about STPSC10C065RY

Automotive 650 V, 10 A Silicon Carbide Power Schottky Diode
Learn More about STPSC10C065RY