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NRND

STPSC10C065RY

Automotive 650 V, 10 A Silicon Carbide Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameI2PAK

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Recommended to PFC applications
  • PPAP capable
  • ECOPACK®2 compliant
    component
In stock
Quantity $ per unit Savings
1-9$4.2718%
10-24$3.406%
25-99$2.4333%
100-249$2.1940%
250-499$2.1840%
500$1.8250%
Contact sales
$4.27
$3.62
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameI2PAK

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Recommended to PFC applications
  • PPAP capable
  • ECOPACK®2 compliant
    component