STPSC10H065BY-TR

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Automotive 650 V, 10 A DPAK Silicon Carbide Power Schottky Diode

Quantity $ per Unit Savings
1 - 9$3.910%
10 - 99$3.5210%
100 - 499$2.8826%
500$2.4637%
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Out of stock
$3.91
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameDPAK

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions.

Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Recommended to PFC applications
  • PPAP capable
  • ECOPACK compliant component