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STPSC10H12B2-TR

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1200V, 10A, silicon carbide power Schottky Diode

Quantity $ per Unit Savings
1 - 9$6.340%
10$5.7010%
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In stock
$6.34
Parameter NameParameter Value
Operating RangeIndustrial
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK HV 2L

This 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature


Housed in DPAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, servers, DC/DC modules, easing the compliance to IEC-60664-1.


The STPSC10H12B2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 °C to 175 °C
  • Low VF
  • DPAK HV creepage distance (anode to cathode) = 3 mm min.
  • ECOPACK2 compliant