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    STPSC10H12B2-TR

    1200V, 10A, silicon carbide power Schottky Diode

    Parameters
    Operating RangeIndustrial
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK HV 2L
    Description

    This 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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    Key features
    Key features
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high voltage periphery
    • Operating Tj from -40 °C to 175 °C
    • Low VF
    • DPAK HV creepage distance (anode to cathode) = 3 mm min.
    • ECOPACK2 compliant
    In stock
    Quantity $ per unit Savings
    1-9$4.720%
    10$3.9716%
    10 + Contact sales
    $4.72
    $4.72
    Parameters
    Operating RangeIndustrial
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK HV 2L
    Description

    This 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
    Read More

    Key features
    Key features
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high voltage periphery
    • Operating Tj from -40 °C to 175 °C
    • Low VF
    • DPAK HV creepage distance (anode to cathode) = 3 mm min.
    • ECOPACK2 compliant