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1200V, 10A, silicon carbide power Schottky Diode
Operating Range | Industrial |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | DPAK HV 2L |
This 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $4.85 | 0% |
10-99 | $3.82 | 21% |
100-499 | $2.75 | 43% |
500 | $2.49 | 49% |
500 + |
Contact sales |
Operating Range | Industrial |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | DPAK HV 2L |
This 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More
|