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STPSC10H12G2Y-TR
Automotive Grade 1200V, 10A, silicon carbide power Schottky Diode
| Operating Range | Automotive |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | D2PAK HV |
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $6.52 | 2% |
| 10-99 | $4.37 | 32% |
| 100-499 | $3.16 | 51% |
| 500 | $2.92 | 54% |
| 500 + | Contact sales | |
$6.52
$6.39
| Operating Range | Automotive |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | D2PAK HV |
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off...
Read More
|