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1200V, 15A, silicon carbide power Schottky Diode
Operating Range | Industrial |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | H2PAK-2 |
This 15 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $7.71 | 0% |
10-24 | $5.65 | 27% |
25-99 | $5.64 | 27% |
100-499 | $4.41 | 43% |
500 | $4.04 | 48% |
500 + |
Contact sales |
Operating Range | Industrial |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | H2PAK-2 |
This 15 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off...
Read More
|