STPSC15H12G2-TR

1200V, 15A, silicon carbide power Schottky Diode

Parameters

Operating Range	Industrial
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	H2PAK-2

Description

This 15 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off...
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Key features

Key features
No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating T_j from -40 °C to 175 °C Low V_F D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant

In stock

Quantity	$ per unit	Savings
1-9	$7.37	0%
10	$6.28	15%
10 +	Contact sales

$7.37

Parameters

Operating Range	Industrial
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	H2PAK-2

Description

Key features

Key features
No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating T_j from -40 °C to 175 °C Low V_F D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant